general features v ds = 60v,i d = 0.3a r ds(on) < 3 ? @ v gs =5v r ds(on) < 2 ? @ v gs =10v esd rating hbm 2300v high power and current handing capability lead free product is acquired surface mount package application direct logic-level interface: ttl/cmos drivers: relays, solenoids, lamps, hammers,display, memories, transistors, etc. battery operated systems solid-state relays schematic diagram marking and pin assignment sot-23 top view package marking and ordering information device marking device device package reel size tape width quantity MSN7002E sot-23 ?180mm 8 mm 3000 units absolute maximum ratings (t a =25 unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 60 v gate-source voltage v gs 20 v t a =25 0.3 continuous drain current (t j =150 ) t a =100 i d 0.19 a drain current-pulsed (note 1) i dm 0.8 a maximum power dissipation p d 0.35 w operating junction and st orage temperature range t j ,t stg -55 to 150 thermal characteristic thermal resistance,junction-to-ambient (note 2) r ja 350 /w MSN7002E 60v(d-s) n-channel enhancement mode power mos fet more semiconductor company limited http://www.moresemi.com 1/6 lead free pin configuration esd protected
electrical characteristics (t a =25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v i d =250 a 60 68 - v zero gate voltage drain current i dss v ds =60v,v gs =0v - - 1 a v gs =10v,v ds =0v - 100 500 na gate-body leakage current i gss v gs =20v,v ds =0v - 4 10 ua on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d =250 a 1 1.7 2.5 v v gs =5v, i d =0.4a - 1.3 3 ? drain-source on-state resistance r ds(on) v gs =10v, i d =0.5a - 1 2 ? forward transconductance g fs v ds =10v,i d =0.2a 0.1 - - s dynamic characteristics (note4) input capacitance c lss - 21 50 pf output capacitance c oss - 11 25 pf reverse transfer capacitance c rss v ds =25v,v gs =0v, f=1.0mhz - 4.2 5 pf switching characteristics (note 4) turn-on delay time t d(on) - 10 - ns turn-on rise time t r - 50 - ns turn-off delay time t d(off) - 17 - ns turn-off fall time t f v dd =30v,i d =0.2a v gs =10v,r gen =10 ? - 10 - ns total gate charge q g v ds =10v,i d =0.3a, v gs =4.5v - 1.7 3 nc drain-source diode characteristics diode forward voltage (note 3) v sd v gs =0v,i s =0.2a - - 1.3 v diode forward current (note 2) i s - - 0.2 a notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. surface mounted on fr4 board, t 10 sec. 3. pulse test: pulse width 300 s, duty cycle 2 . % 4. guaranteed by design, not subject to production more semiconductor company limited http://www.moresemi.com 2/6 MSN7002E
typical electrical and thermal characteristics vgs rgen vin g vdd rl vout s d figure 1:switching test circuit vds drain-source voltage (v) figure 3 output characteristics i d - drain current (a) figure 5 drain-source on-resistance v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% t r t on 90% 10% t off t d(off) t f 90% v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% 90% t r t on 90% 10% t off t d(off) t f 90% figure 2:switching waveforms vgs gate-source voltage (v) figure 4 transfer characteristics vgs gate-source voltage (v) figure 6 rdson vs vgs rdson on-resistance( ) i d - drain current (a) rdson on-resistance( ) i d - drain current (a) more semiconductor company limited http://www.moresemi.com 3/6 MSN7002E
qg gate charge (nc) figure 7 gate charge t j -junction temperature( ) figure 9 drain-source on-resistance vds drain-source voltage (v) figure 11 capacitance vs vds vsd source-drain voltage (v) figure 8 source-draindiode forward vds drain-source voltage (v) figure 10 safe operation area vgs gate-source voltage (v) normalized on-resistance c capacitance (pf) i s - reverse drain current (ma) i d - drain current (a) more semiconductor company limited http://www.moresemi.com 4/6 MSN7002E
square wave pluse duration(sec) figure 12 normalized maximum transient thermal impedance r(t),normalized effective transient thermal im p edance more semiconductor company limited http://www.moresemi.com 5/6 MSN7002E
sot-23 package information notes 1. all dimensions are in millimeters. 2. tolerance 0.10mm (4 mil) unless otherwise specified 3. package body sizes exclude mold flash and gate burrs. mold flash at the non-lead sides should be less than 5 mils. 4. dimension l is measured in gauge plane. 5. controlling dimension is millimeter, converted inch dimensions are not necessarily exact. dimensions in millimeters symbol min. max. a 0.900 1.150 a1 0.000 0.100 a2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 d 2.800 3.000 e 1.200 1.400 e1 2.250 2.550 e 0.950typ e1 1.800 2.000 l 0.550ref l1 0.300 0.500 0 8 more semiconductor company limited http://www.moresemi.com 6/6 MSN7002E
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